High read stability and low leakage SRAM cell based on data/bitline decoupling

2006 IEEE International Systems-on-Chip Conference, SOC

Volumn , Issue , 2006, Pages 115-116

  Liu, Zhiyu ^a   Kursun, Volkan ^a  

^a University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 43749123442     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOCC.2006.283862     Document Type: Conference Paper

References (1)

1. A. Bhavnaganwala, X. Tang, and J. D. Meindl, "The Impact of Intrinsic Device Fluctuations on CMOS SRAM Cell Stability," IEEE Journal of Solid-State Circuits, Vol. 36, No. 4, pp. 658-665, April 2001.