3 Dimensional GAA transitors: Twin silicon nanowire MOSFET and multi-bridge-channel MOSFET

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 131-134

  Park, Donggun ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

MOSFET DEVICES; NANOWIRES; SILICON; THREE DIMENSIONAL;

FUTURE SCALED DEVICES; GATE LENGTH; SHORT CHANNEL EFFECTS; TWIN SINANOWIRE;

TRANSISTORS;

EID: 43749102056     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284471     Document Type: Conference Paper

References (10)