Stacked nanowires ΦFET with independent gates: A novel device for ultra-dense low-power applications

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 95-96

  Dupre C ^a,b   Ernst, T ^a   Arvet, C ^a   Aussenac, F ^a   Deleonibus, S ^a   Ghibaudo, G ^b  

^a CEA LETI   (France)

^b MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLING EFFECTS; STACKED NANOWIRES; TECHNOLOGICAL EVALUATION; ULTRA DENSE LOW POWER APPLICATIONS;

COMPUTER SIMULATION; LOGIC GATES; LOW POWER ELECTRONICS; NANOWIRES;

FIELD EFFECT TRANSISTORS;

EID: 43549127069     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357869     Document Type: Conference Paper

References (9)

1. T. Ernst et al., IEDM Techn. Digest 2006, p.997
2. Y. X. Liu et al., IEEE Int. SOI Conf. 2005, p. 219
3. M. Chiang et al, IEEE Int. SOI Conf. 2004, p. 122
4. J.-P. Colinge, Sol. State Elec., p. 897, 2004
5. W. Hänsch, Sol. State Elec., p. 839, 1989
6. A. Tsormpatzoglou et al., Proc. of ULIS Conf. 2007
7. C. O. Sodini et al. IEEE Trans. Electron. Dev., p. 1386, 198
8. S. Y. Yan et al. IEEE Trans. Electron Dev., p. 1704, 1992
9. Z.-H. Liu et al. IEEE Trans. Electron Dev., p. 86, 1993