Anomalous narrow width effect in NMOS and PMOS surface channel transistors using shallow trench isolation

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2005, Pages 773-776

  Lau, W S ^a   See, K S ^a,b   Eng, C W ^a,b   Aw, W K ^a   Jo, K H ^b   Tee, K C ^b   Lee, James Y M ^b   Quek, Elgin K B ^b   Kim, H S ^b   Chan, Simon T H ^b   Chan, L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; MOS DEVICES; PHOSPHORUS; THRESHOLD VOLTAGE;

GATE LENGTHS; SHALLOW TRENCH ISOLATION (STI);

TRANSISTORS;

EID: 43549111630     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2005.1635391     Document Type: Conference Paper

References (14)