Structure of diamond-silicon carbide nanocomposites as a function of sintering temperature at 8 GPa

Materials Science and Engineering: A

Volumn 487, Issue 1-2, 2008, Pages 180-188

  Balogh, L ^a   Nauyoks, S ^a   Zerda, T W ^a   Pantea, C ^a   Stelmakh, S ^b   Palosz, B ^b   Ungar T ^c  

^a TEXAS CHRISTIAN UNIVERSITY   (United States)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c EÖTVÖS LORÁND UNIVERSITY   (Hungary)

Author keywords

Composites; Diamond; Dislocations; Planar defects; Silicon carbide

Indexed keywords

CRYSTALLITE SIZE; DIAMONDS; DISLOCATIONS (CRYSTALS); NANOCOMPOSITES; RESIDUAL STRESSES; SILICON CARBIDE; SINTERING; STACKING FAULTS; TEMPERATURE DISTRIBUTION;

PLANAR DEFECTS;

CERAMIC MATRIX COMPOSITES;

CERAMIC MATRIX COMPOSITES; CRYSTALLITE SIZE; DIAMONDS; DISLOCATIONS (CRYSTALS); NANOCOMPOSITES; RESIDUAL STRESSES; SILICON CARBIDE; SINTERING; STACKING FAULTS; TEMPERATURE DISTRIBUTION;

EID: 43549108808     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2007.10.006     Document Type: Article

References (29)