A holistic model for mobility enhancement through process-induced stress

2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC

Volumn , Issue , 2005, Pages 43-46

  Dunga, Mohan V ^a   Xi, Xuemei ^a   Niknejad, Ali M ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL MODELS; TRANSISTORS;

MOBILITY ENHANCEMENT; PROCESS INDUCED STRESS;

ELECTRON MOBILITY;

EID: 43549105336     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EDSSC.2005.1635201     Document Type: Conference Paper

References (6)