Geometric magnetoresistance and mobility behavior in single-gate and double-gate SOI devices

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2007, Pages 59-60

  Rodriguez, N ^a,b   Donetti, L ^a   Gamiz F ^a   Cristoloveanu, S ^b  

^a UNIVERSITY OF GRANADA   (Spain)

^b Institut de Microelectronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BACK CHANNELS; DOUBLE-GATE SOI DEVICES; GEOMETRIC MAGNETORESISTANCE;

CARRIER MOBILITY; COMPUTER SIMULATION; MAGNETORESISTANCE; MONTE CARLO METHODS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 43549092812     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2007.4357851     Document Type: Conference Paper

References (9)

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3. C. Gallon et al., Proc. Int. SOI Conf. 2004, 153.
4. W. Chaisantikulwat et al, Sol. Stat. Elec. 50, 637 (2006).
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7. L. Donetti et al., Proc. EuroSOI Conf. 52.2007.
8. A. Ohata et al., Proc. ESSDERC 2004.
9. G. Ghibaudo, Eletr. Lett. Vol. 24, p.543, 1988