Characterization of PZT/PT multilayer thin film by sol-gel

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1517-1520

  Wang, Jing ^a   Zhang, LiangYing ^a   Yao, Xi ^a   Li, JianKang ^a  

^a TONGJI UNIVERSITY   (China)

Author keywords

C. Dielectric properties; D. Perovskite; D. PZT; Leakage current; PT buffer layer

Indexed keywords

ANNEALING; CHARACTERIZATION; DEPOSITION; DIELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; MICROSTRUCTURE; MULTILAYERS; PEROVSKITE; SOL-GELS; X RAY DIFFRACTION ANALYSIS;

INTERFACIAL LAYERS; PT BUFFER LAYER; PZT; REMNANT POLARIZATION;

THIN FILMS;

EID: 4344700607     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.124     Document Type: Conference Paper

References (8)

1. Lee W.I., Lee J.K. Dopant effects on the grain structure and electrical property of PZT thin films prepared by sol-gel process. Mater. Res. Bull. 30(10):1995;1185-1191.
2. 3 thin films for pyroelectric application. Thin Solid Films. 371:2000;254-258.
3. Hanson C.M., Beratan H.R. Thin film ferroelectrics: breakthrough. Proc. SPIE. 4721:2002;91-98.
4. 3 thin films. Microelectron. Eng. 29(1-4):1995;243-246.
5. 3 thin film for pyroelectric infrared sensor application. Infrared Phys. Technol. 44(3):2003;177-182.
6. 3. Thin Solid Films. 303(1-2):1997;94-100.
7. Lee S.-G., Lee Y.-H. Dielectric properties of sol-gel derived PZT(40/60)/PZT(60/40) heterolayered thin films. Thin Solid Films. 353(1-2):1999;244-248.
8. 3 thin films by sol-gel methods. Microelectron. Eng. 66(1-4):2003;726-732.