A new measurement technique for the characterization of carrier lifetime in thin SOI MOSFETs

Thin Solid Films

Volumn 462-463, Issue SPEC. ISS., 2004, Pages 6-10

  Nakajima, Yoshikata ^a   Tomita, Hideki ^a   Aoto, Kenichi ^a   Sasaki, Kenji ^a   Hanajiri, Tatsuro ^a   Toyabe, Toru ^a   Morikawa, Takitaro ^a   Sugano, Takuo ^a  

^a TOYO UNIVERSITY   (Japan)

Author keywords

Bulk recombination; Kink effect; Lifetime; SOI; Surface recombination; Traps

Indexed keywords

BULK RECOMBINATION; KINK EFFECT; LIFETIME; SURFACE RECOMBINATION; TRAPS;

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC PROPERTIES; ENERGY MANAGEMENT; SILICON ON INSULATOR TECHNOLOGY; SURFACE PHENOMENA; THIN FILMS;

MOSFET DEVICES;

EID: 4344696840     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.05.016     Document Type: Article

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