RTS in submicron MOSFETs and quantum dots

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5472, Issue , 2004, Pages 64-73

  Sikula, J ^a   Pavelka, J ^a   Sedlakova, V ^a   Tacano, M ^b   Hashiguchi, S ^c   Toita, M ^d  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

^b MEISEI UNIVERSITY   (Japan)

^c UNIVERSITY OF YAMANASHI   (Japan)

^d Asahikasei Chemicals Corporation   (Japan)

Author keywords

Capture time constant; Emission time constant; MOSFET; Noise spectral density; Quantum dots; RTS noise

Indexed keywords

CAPTURE TIME CONSTANT; EMISSION TIME CONSTANT; NOISE SPECTRAL DENSITY; RTS NOISE;

MATHEMATICAL MODELS; MODULATION; NANOTECHNOLOGY; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR QUANTUM DOTS; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

MOSFET DEVICES;

EID: 4344673320     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.547744     Document Type: Conference Paper

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