Defect learning with 193-nm resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 2, 2004, Pages 779-791

  Mäge, Iris ^a   Pintér, Beatrix ^a   Tuckermann, Martin ^b   Donzella, Oreste ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

193nm photo resist technology; Automatic in line defect classification; Defect inspection; Micro bridging; Resist defect reduction

Indexed keywords

193NM PHOTO-RESIST TECHNOLOGY; AUTOMATIC IN-LINE DEFECT CLASSIFICATION; DEFECT INSPECTION; MICRO BRIDGING; RESIST DEFECT REDUCTION;

DEFECTS; DYNAMIC RANDOM ACCESS STORAGE; INTEGRATED CIRCUITS; LITHOGRAPHY; MONITORING; QUALITY CONTROL; SHRINKAGE; THIN FILMS;

PHOTORESISTORS;

EID: 4344672405     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.534055     Document Type: Conference Paper

References (4)

1. George Mirth, Reduction of Post Develop Residue Using Optimal Developer Chemistry & Developer Rinse Processes, 1997.
2. Kay Lederer, Barry Saville, Ingrid Peterson, Automated Microdefect Monitoring for 300 mm Lithography, Olin Interface 2002.
3. Chris M. Jones, et al., Faster Qualification of 193 nm Resists for 100 nm Development Using Photo Cell Monitoring, SPIE 2003.
4. Ingrid Peterson, Louis Breaux, Andrew Cross, Mike von den Hoff, Successful Demonstration of a Comprehensive Lithography Defect Monitoring Strategy, SPIE 2003.