Radiation induced luminescence processes in c-BN

Radiation Measurements

Volumn 38, Issue 4-6, 2004, Pages 615-618

  Trinkler, L ^a   Berzina, B ^a   Benabdesselam, M ^b   Iacconi, P ^b   Botter Jensen L ^c   Atobe, K ^d  

^a UNIVERSITY OF LATVIA   (Latvia)

^b UNIVERSITÉ CÔTE D'AZUR   (France)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

^d NARUTO UNIVERSITY OF EDUCATION   (Japan)

Author keywords

Cubic boron nitride; Optically stimulated luminescence; Photoluminescence; Thermoluminescence

Indexed keywords

CERAMIC MATERIALS; CUBIC BORON NITRIDE; ELECTRIC EXCITATION; LENSES; LIGHT EMISSION; OPTOELECTRONIC DEVICES; PHOTOMULTIPLIERS; RADIATION; THERMOLUMINESCENCE; ULTRAVIOLET RADIATION; X RAYS;

BAND GAP MATERIALS; OPTICALLY STIMULATED LUMINESCENCE (OSL); THERMALLY STIMULATED LUMINESCENCE; X-RAY EXCITED LUMINESCENCE (XL);

PHOTOLUMINESCENCE;

EID: 4344647132     PISSN: 13504487     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.radmeas.2004.01.010     Document Type: Conference Paper

References (5)

1. Berzina B., Trinkler L., Atobe K. Spectral characteristics of native defects in BN. Phys. Stat. Sol. (c). 0(1):2002;421-424.
2. Gorchica I., Svane A., Christensen N.E. Native defects and carbon impurity in cubic BN. MRS Internet J. Nitride Semicond. Res. 3:1998;48.
3. Gubanov V.A., Pentaleri E.A., Fong C.Y., Klein B.M. Electronic structure of defects and impurities in III-V nitrides. II Be, Mg and Si in cubic boron nitride Phys. Rev. B. 56(20):1997;13077-13086.
4. Gubanov V.A., Lu Z.W., Barry M.K., Fong C.Y. Electronic structure of defects and impurities in III-V nitrides. vacancies in cubic boron nitride Phys. Rev. B. 53(8):1996;4377-4385.
5. Manfredotti C., Vittone E., Lo Giudice A., et al. Ionoluminescence in CVD diamond and in cubic boron nitride. Diamond Relat. Mater. 10:2001;568-573.