The influence of temperature gradient on energy resolution of Bi 4Ge3O12 (BGO) crystal

Ceramics International

Volumn 30, Issue 7, 2004, Pages 1665-1668

  Hu, Guanqin ^a   Wang, Shaohao ^a   Li, Yun ^a   Xu, Li ^a   Li, Peijun ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Bi4Ge3O12 crystal; Energy resolution; Radiation damage

Indexed keywords

ANNEALING; CRYSTALS; POSITRON EMISSION TOMOGRAPHY; SCINTILLATION; STOICHIOMETRY; TEMPERATURE DISTRIBUTION; ULTRAVIOLET RADIATION;

ENERGY RESOLUTION; EQUILIBRIUM AMOUNT; GLOW DISCHARGE MASS SPECTROMETRY (GDMS); SPECIFIC SPEED;

BISMUTH COMPOUNDS;

EID: 4344634397     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.157     Document Type: Conference Paper

References (4)

1. Li P.-J., Fan S.-O. Study on irradiation damage and thermoluminescence of BGO crystal. J. Inorg. Mater. 6(3):1991;267-268.
2. Yin Z.W., Feng X.Q., Hu G.Q. Doping effect and mechanism of radiation damage of BGO crystal. Ferroelectrics. 151:1994;287-298.
3. Zhu R.Y., Zhou T.Q., He C.-F. A study on radiation damage in doped BGO crystal. Nucl. Instr. Anal. Meth. A. 302:1991;69-75.
4. Gusev V.A., Kupriyanov I.N., Antsygin V.D., Fadeev S.N. Features of radiation damage of BGO crystals grown by the low-thermal-gradient Czochralski technique. Nucl. Instr. Anal. Meth. A. 460:2001;457-464.