Study of cluster forming at growth of A3B5 semiconductor compounds from liquid phase

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 292-297

  Khukhryansky, Yu P ^a,b   Shunikov, E A ^a   Emelyanov, V V ^a  

^a VORONEZH STATE TECHNICAL UNIVERSITY   (Russian Federation)

^b NONE   (Russian Federation)

Author keywords

A1. Cluster forming; A1. Growth models; A1. Surface potential; A2. Growth from melt; B2. Semiconducting materials

Indexed keywords

CRYSTAL GROWTH; DIFFUSION; LIQUID PHASE EPITAXY; MASS TRANSFER; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SUBSTRATES;

CLUSTER FORMING; GROWTH FROM MELT; GROWTH MODELS; SURFACE POTENTIAL;

SEMICONDUCTOR MATERIALS;

EID: 4344623959     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.088     Document Type: Article

References (8)

1. Thermodynamical and thermophysical properties of combustion products. Reference book in 5 volumes. V.1. Calculation methods, VNITI, Academy of Sciences USSR, Moscow, 1971-1979.
2. Ryazanov D.V., Skripnikov V.A., Khukhryansky Yu.P. Electron. Mater. 3:1998;51.
3. F.F. Abraham, J. Vacuum Sci. Technol. (1984) 534.
4. Eckstein W. Computer simulation of ion-solid interactions. 1991;Springer-Verlag, Berlin.
5. Ilegems M., Panish M.B., Arthur J.R. J. Chem. Thermodynamics. 6:1974;157.
6. Panish M.B. J. Crystal Growth. 27:1974;6.
7. Thurmond C.D. J. Phys. Chem. Solids. 26(5):1965;785.
8. Kaneko J. Electroschem. Soc. 121(4):1974;556.