Investigation of spectrally broad gain multiple-width quantum well material for colliding pulse mode-locked operation

IEE Proceedings: Optoelectronics

Volumn 151, Issue 3, 2004, Pages 133-136

  Jain, M ^a   McDougall, S D ^b   Bryce, A C ^c   Ironside, C N ^c  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b Kelvin Campus   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COLLIDING PULSE MODE LOCKED OPERATION; OPTICAL MODES; OPTICAL SPECTRA; SPECTRAL GAIN MEASUREMENT;

BANDWIDTH; CURRENT DENSITY; ELECTRIC FIELDS; ELECTRON TRANSITIONS; ENERGY GAP; GAIN MEASUREMENT; LASER MODE LOCKING; LASER MODES; LASER PULSES; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SPECTRUM ANALYSIS;

QUANTUM WELL LASERS;

EID: 4344611771     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040205     Document Type: Article

References (17)

1. Lee, B.L., and Lin, C.F.: 'Wide-range tunable semiconductor lasers using asymmetric dual quantum wells', IEEE Photonics Technol. Lett., 1998, 10, (3), pp. 1380-1382
2. Hamp, M.J., Cassidy, D.T., Robinson, B.J., Zhao, Q.C., and Thompson, D.A.: 'Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells', Appl. Phys. Lett., 1999, 74, (5), pp. 744-746
3. Lee, B.L., and Lin, C.F.: 'Short-pulse generation with broad-band tunability from semiconductor lasers in an external ring cavity', IEEE Photonics Technol. Lett., 2000, 12, (6), pp. 618-620
4. Vasil'ev, P.P.: 'Ultrashort pulse generation in diode lasers', Opt. Quantum Electron., 1992, 24, pp. 801-824
5. Thomson, J.D., Summers, H.D., Hulyer, P.J., Smowton, P.M., and Blood, P.: 'Determination of single-pass optical gain and internal loss using a multisection device', Appl. Phys. Lett., 1999, 75, pp. 2527-2529
6. Avrutin, E.A., Marsh, J.H., Arnold, J.M., Krauss, T.F., Pottinger, H., and De La Rue, R.M.: 'Analysis of harmonic (sub) THz passive mode-locking in monolithic compound cavity Fabry-Perot and ring laser diodes', IEE Proc., Optoelectron., 1999, 146, (1), pp. 55-61
7. Smith, R.L., and Alley, C.O.: 'A linear technique for the measurement of ultrashort optical pulse widths', Opt. Commun., 1970, 1, (6), pp. 262-264
8. McDougall, S.D., Martins-Filho, J.F., and Ironside, C.N.: 'An investigation of monolithic colliding pulse mode locked semiconductor lasers'. Presented at Conf. on Lasers and electro-optics (CLEO), Anaheim, 1996, USA, paper CTHK38
9. McDougall, S.D.: 'Monolithic colliding pulse mode-locking of AlGaAs/GaAs and InGaAs/InGaAsP quantum well lasers'. PhD thesis, University of Glasgow, 1997
10. Lee, B.L., Lin, C.F., Lai, J.W., and Lin, W.: 'Experimental evidence of nonuniform carrier distribution in multiple-quantum-well laser diodes', Electron. Lett., 1998, 34, (12), pp. 1230-1231
11. Tessler, N., and Eisenstein, G.: 'Distributed nature of quantum-well lasers', Appl. Phys. Lett., 1993, 62, (1), pp. 10-12
12. Piprek, J., Abraham, P., and Bowers, J.E.: 'Carrier nonuniformity effects on the internal efficiency of multiquantum-well lasers', Appl. Phys. Lett., 1999, 74, (4), pp. 489-491
13. Lin, C.H., Chua, C.L., Zhu, Z.H., and Lo, Y.H.: 'On nonuniform pumping for multiple-quantum well semiconductor lasers', Appl. Phys. Lett., 1994, 65, (7), pp. 2383-2385
14. Hamp, M.J., Cassidy, D.T., Robinson, B.J., Zhao, Q.C., and Thompson, D.A.: 'Nonuniform carrier distribution in asymmetric mulfiple-quantum-well InGaAsP laser structures with different number of quantum wells', Appl. Phys. Lett., 1999, 74, (5), pp. 744-746
15. Hazell, J.F., Simmons, J.G., Evans, J.D., and Blaauw, C.: 'The effect of varying barrier height on the operational characteristics of 1.3 μm strained-layer MQW lasers', IEEE J. Quantum Electron., 1998, 34, (12), pp. 2358-2363
16. Silfvenius, C., Landgren, G., and Marcinkevicius, S.: 'Carrier transport effects in 1.3 mm multiple quantum well InGaAsP laser design', Jpn. J. Appl. Phys., 1999, 38, pp. 1227-1229
17. Lin, C.F., Wu, B.R., Laih, L.W., and Shih, T.T.: 'Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers-superluminescent diodes', Opt. Lett., 2001, 26, (14), pp. 1099-1101