Optimization of scatterometry parameters for Shallow Trench Isolation (STI) monitor

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5375, Issue PART 1, 2004, Pages 576-586

  Leray, Philippe ^a   Cheng, Shaunee ^a   Kremer, Stephanie ^b   Ercken, Monique ^a   Pollentier, Ivan ^a  

^a IMEC   (Belgium)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

CD; Monitor; Scatterometry; Shallow Trench Isolation (STI) characterization

Indexed keywords

CRITICAL DIMENSIONS (CD); SCATTEROMETRY; SHALLOW TRENCH ISOLATION (STI);

APPROXIMATION THEORY; OPTIMIZATION; ROBUSTNESS (CONTROL SYSTEMS); SCANNING ELECTRON MICROSCOPY; SENSITIVITY ANALYSIS; THICKNESS MEASUREMENT;

SCATTERING;

EID: 4344603148     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.537440     Document Type: Conference Paper

References (5)

1. Cheng, C.P., et al, "A highly Manufacturabe Corner Rounding Solution for 0.18um Shallow Trench Isolation", IDEM Proceeding, 1999.
2. T. Lin, et al, "A Fully Plannarized 6-Level-Metal CMOS Technology for 0.25-0.18 Micron Foundry Manufacturing", IDEM Proceeding, 1999.
3. Raymond, Christopher J., "Scatterometry for shallow trench isolation (STI) process metrology", SPIE Proceeding, vol. 4344, 2001.
4. Mieher, Walter, et al, "Spectroscopic CD Metrology for Sub-100nm Lithography Process Control", SPIE Proceeding, vol., 2001.
5. Cheng, S., Kramer, S., "Application of SpectraCD™ to the Evaluation of 193nm Lithography", presentation presented at the First European Scatterometry Workshop, April, 2003.