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Volumn 14, Issue 5, 2004, Pages 289-297

Growth of cubic boron nitride single crystals using a metal solvent under high pressure

Author keywords

cBN single crystal; Crystal growth; High pressure; Metal solvent; Temperature gradient method

Indexed keywords

CBN SINGLE CRYSTALS; HIGH PRESSURE; METAL SOLVENTS; TEMPERATURE GRADIENT METHOD;

EID: 4344602037     PISSN: 13449931     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (10)

References (24)
  • 2
    • 4344637377 scopus 로고
    • 72CRD178, General Electric Co., USA
    • R. C. DeVries: GE Technical Report, 72CRD178, General Electric Co., USA (1972).
    • (1972) GE Technical Report
    • DeVries, R.C.1
  • 19
    • 4344603709 scopus 로고    scopus 로고
    • Japanese accepted application No 51-16197 from 07.05.73
    • Japanese accepted application No 51-16197 from 07.05.73.
  • 20
    • 4344576407 scopus 로고    scopus 로고
    • Japanese accepted application No 51-16198 from 07.05.73
    • Japanese accepted application No 51-16198 from 07.05.73.
  • 21
    • 4344605670 scopus 로고    scopus 로고
    • Japanese accepted application No 51-16199 from 07.05.73
    • Japanese accepted application No 51-16199 from 07.05.73.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.