Investigation of semiconductors with defects using Raman scattering

Physics-Uspekhi

Volumn 47, Issue 3, 2004, Pages 249-272

  Falkovsky, L A ^a  

^a LANDAU INSTITUTE FOR THEORETICAL PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4344586106     PISSN: 10637869     EISSN: None     Source Type: Journal    
DOI: 10.1070/PU2004v047n03ABEH001735     Document Type: Review

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