Pentacene nanotransistor with carbon nanotube electrodes

Applied Physics Letters

Volumn 85, Issue 6, 2004, Pages 1021-1023

  Tsukagoshi, Kazuhito ^a,b   Yagi, Iwao ^a,c   Aoyagi, Yoshinobu ^a,c  

^a RIKEN   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON NANOTUBES; CIRCUIT OSCILLATIONS; COULOMB BLOCKADE; CRYSTAL STRUCTURE; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; ELECTRON TUNNELING; EVAPORATION; NANOSTRUCTURED MATERIALS; NATURAL FREQUENCIES; SCANNING ELECTRON MICROSCOPY; THERMAL EXPANSION;

LOCAL EPITAXIAL ADHESION; MULTIPLE TUNNELING JUNCTIONS; MULTIWALLED CARBON NANOTUBES (MWNT); NANOTRANSISTORS;

THIN FILM TRANSISTORS;

EID: 4344583060     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1779345     Document Type: Article

References (29)

1. H. Klauk, D. J. Gundlach, J. A. Nichols, C. D. Sheraw, M. Bonse, and T. N. Jackson, Solid State Technol. 43, 63 (2000).
2. G. H. Gelinck, T. C. T. Geuns, and D. M. de Leeuw, Appl. Phys. Lett. 77, 1487 (2000).
3. M. Halik, H. Klauk, U. Zschieschang, T. Kriem, G. Schmid, W. Radlik, and L. Wussow, Appl. Phys. Lett. 81, 289 (2002).
4. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, and D. M. de Leeuw, Appl. Phys. Lett. 73, 108 (1998).
5. C. D. Sheraw, L. Zhou, J. R. Huang, D. J. Gundlach, T. N. Jackson, M. G. Kane, I. G. Hill, M. S. Hammond, J. Campi, B. K. Greening, J. Francl, and J. West, Appl. Phys. Lett. 80, 1088 (2002).
6. S. F. Nelson, Y. Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
7. G. Horowitz, R. Hajlaoui, and P. Delannoy, J. Phys. III 5, 355 (1995).
8. M. C. J. M. Vissenberg and M. Matters, Phys. Rev. B 57, 12964 (1998).
9. C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
10. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, Science 90, 2123 (2000).
11. W. A. Schoonveld, J. Wildeman, D. Fichou, P. A. Bobbert, B. J. van Wees, and T. M. Klapwijk, Nature (London) 404, 977 (2000).
12. P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, Solid-State Electron. 47, 259 (2003).
13. I. Yagi, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 84, 813 (2004).
14. A. Nitzan and M. A. Ratner, Science 300, 1384 (2003).
15. T. W. Ebbesen and P. M. Ajayan, Nature (London) 358, 220 (1992).
16. K. Tsukagoshi, B. W. Alphenaar, and H. Ago, Nature (London) 401, 572 (1999).
17. A. Kanda, Y. Ootuka, K. Tsukagoshi, and Y. Aoyagi, Appl. Phys. Lett. 79, 1354 (2001).
18. P. G. Collins, M. Hersam, M. Arnold, R. Martel, and P. Avouris, Phys. Rev. Lett. 86, 3128 (2001).
19. Y. Luo, G. Wang, J. A. Theobald, and P. H. Beton, Surf. Sci. 537, 241 (2003).
20. N. Nakashima, Y. Tomonari, and H. Murakami, Chem. Phys. Lett. 31, 638 (2002).
21. Y. Harada, H. Ozaki, and K. Ohno, Phys. Rev. Lett. 52, 2269 (1984).
22. J. W. McClure, Phys. Rev. 108, 612 (1957).
23. S. Paulson, A. Heiser, M. B. Nardelli, R. M. Taylor, M. Falvo, R. Superfine, and S. Washburn, Science 290, 1742 (2000).
24. A. Buldum and J. P. Lu, Phys. Rev. B 63, 161403 (2001).
25. K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
26. For a review, see Single Charge Tunneling, edited by H. Grabert and M. H. Devoret (Plenum, New York, 1991).
27. L. F. Drummy, C. Kubel, D. Lee, A. White, and D. C. Martin, Adv. Mater. (Weinheim, Ger.) 14, 54 (2002).
28. H. Matare, Defect Electronics in Semiconductors (Wiley, New York, 1971; Mir, Moscow, 1974).
29. F. R. Waugh, M. J. Berry, C. H. Crouch, C. Livermore, D. J. Mar, R. M. Westervelt, K. L. Campman, and A. C. Gossard, Phys. Rev. B 53, 1413 (1996).