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Volumn 565, Issue 2-3, 2004, Pages 121-128

Quantitative characterization of the Al nanoclustering induced by H interaction with Si(1 0 0)c(4 × 12)-Al surface phase

Author keywords

Aluminum; Atom solid interactions; Auger electron spectroscopy; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography

Indexed keywords

ACTIVATION ENERGY; ATOMS; AUGER ELECTRON SPECTROSCOPY; DESORPTION; ELECTROCHEMISTRY; HYDROGEN; IN SITU PROCESSING; LOW ENERGY ELECTRON DIFFRACTION; MORPHOLOGY; NANOSTRUCTURED MATERIALS; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; SURFACE STRUCTURE;

EID: 4344580314     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.06.174     Document Type: Article
Times cited : (6)

References (15)
  • 12
    • 14544293176 scopus 로고    scopus 로고
    • Surface diffusion on metals, semiconductors and insulators
    • H.P. Bonzel (Ed.), Springer-Verlag, Berlin, Heidelberg, New York
    • E.G. Seebauer, M.Y.L. Jung, Surface diffusion on metals, semiconductors and insulators, in: H.P. Bonzel (Ed.), Physics of Covered Solid Surfaces, Landolt-Börnstein (New Series), vol. III/42, Springer-Verlag, Berlin, Heidelberg, New York, 2001, pp. 455-530.
    • (2001) Physics of Covered Solid Surfaces, Landolt-Börnstein (New Series) , vol.III-42 , pp. 455-530
    • Jung, E.G.1    Seebauer, M.Y.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.