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Volumn 565, Issue 2-3, 2004, Pages 121-128
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Quantitative characterization of the Al nanoclustering induced by H interaction with Si(1 0 0)c(4 × 12)-Al surface phase
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Author keywords
Aluminum; Atom solid interactions; Auger electron spectroscopy; Scanning tunneling microscopy; Silicon; Surface structure, morphology, roughness, and topography
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Indexed keywords
ACTIVATION ENERGY;
ATOMS;
AUGER ELECTRON SPECTROSCOPY;
DESORPTION;
ELECTROCHEMISTRY;
HYDROGEN;
IN SITU PROCESSING;
LOW ENERGY ELECTRON DIFFRACTION;
MORPHOLOGY;
NANOSTRUCTURED MATERIALS;
SCANNING TUNNELING MICROSCOPY;
SUBSTRATES;
SURFACE STRUCTURE;
ATOM-SOLID INTERACTIONS;
NANOCLUSTERS;
ROUGHNESS AND TOPOGRAPHY;
SURFACE DIFFUSION;
ALUMINUM;
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EID: 4344580314
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/j.susc.2004.06.174 Document Type: Article |
Times cited : (6)
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References (15)
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