-
1
-
-
0000904750
-
Self-compensation of Electrically Active Impurities by Native Defects in IV-VI Semiconductors
-
S.-Peterburg
-
Kaidanov, V.I., Nemov, S.A., and Ravich, Yu.I., Self-compensation of Electrically Active Impurities by Native Defects in IV-VI Semiconductors, Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1994, vol. 28, no. 3, pp. 369-393.
-
(1994)
Fiz. Tekh. Poluprovodn
, vol.28
, Issue.3
, pp. 369-393
-
-
Kaidanov, V.I.1
Nemov, S.A.2
Ravich, Yu.I.3
-
2
-
-
4344718386
-
Electrical Parameters of Vapour Phase Doped with Ga Lead Telluride Thin Films on Si Substrates
-
Obninsk
-
Ugai, Ya.A., Samoylov, A.M., Synorov, Yu.V., et al., Electrical Parameters of Vapour Phase Doped with Ga Lead Telluride Thin Films on Si Substrates, Proc. 3rd Int. Conf. on Single Crystal Growth, Strength Problems, and Heat Mass Transfer, Obninsk, 2000, vol. 2, pp. 525-533.
-
(2000)
Proc. 3rd Int. Conf. on Single Crystal Growth, Strength Problems, and Heat Mass Transfer
, vol.2
, pp. 525-533
-
-
Ugai, Ya.A.1
Samoylov, A.M.2
Synorov, Yu.V.3
-
3
-
-
4344713395
-
Transport Properties of Ga-Doped PbTe Thin Films on Si Substrates
-
Ugai, Ya.A., Samoylov, A.M., Sharov, M.K., et al., Transport Properties of Ga-Doped PbTe Thin Films on Si Substrates, Neorg. Mater., 2002, vol. 38, no. 1, pp. 17-23 [Inorg. Mater. (Engl. Transl.), vol. 38, no. 1, pp. 12-16].
-
(2002)
Neorg. Mater.
, vol.38
, Issue.1
, pp. 17-23
-
-
Ugai, Ya.A.1
Samoylov, A.M.2
Sharov, M.K.3
-
4
-
-
4344713395
-
-
Engl. Transl.
-
Ugai, Ya.A., Samoylov, A.M., Sharov, M.K., et al., Transport Properties of Ga-Doped PbTe Thin Films on Si Substrates, Neorg. Mater., 2002, vol. 38, no. 1, pp. 17-23 [Inorg. Mater. (Engl. Transl.), vol. 38, no. 1, pp. 12-16].
-
Inorg. Mater.
, vol.38
, Issue.1
, pp. 12-16
-
-
-
5
-
-
0003400325
-
-
Moscow: Mosk. Inst. Stali i Splavov
-
Gorelik, S.S., Rastorguev, L.N., and Skakov, Yu.A., Rentgenograficheskii i elektronno-opticheskii analiz (X-ray Diffraction and Electron-Optical Analysis), Moscow: Mosk. Inst. Stali i Splavov, 1994.
-
(1994)
Rentgenograficheskii I Elektronno-opticheskii Analiz (X-ray Diffraction and Electron-Optical Analysis)
-
-
Gorelik, S.S.1
Rastorguev, L.N.2
Skakov, Yu.A.3
-
8
-
-
0004283906
-
-
London: Butterworths
-
Moss, T.S., Optical Properties of Semiconductors, London: Butterworths, 1959. Translated under the title Opticheskie svoistva poluprovodnikov, Moscow: Inostrannaya Literatura, 1961.
-
(1959)
Optical Properties of Semiconductors
-
-
Moss, T.S.1
-
9
-
-
4344574891
-
-
Translated under the title Moscow: Inostrannaya Literatura
-
Moss, T.S., Optical Properties of Semiconductors, London: Butterworths, 1959. Translated under the title Opticheskie svoistva poluprovodnikov, Moscow: Inostrannaya Literatura, 1961.
-
(1961)
Opticheskie Svoistva Poluprovodnikov
-
-
|