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Volumn 30, Issue 7, 2004, Pages 1289-1293

A new structure of SOI MOSFET for reducing self-heating effect

Author keywords

MEDICI; Multi layered SOI MOSFET; Self heating effect; Simulation

Indexed keywords

COMPUTER SIMULATION; DIFFUSION; ELECTRONIC EQUIPMENT; HEAT TREATMENT; SILICA; SILICON ON INSULATOR TECHNOLOGY; THERMAL CONDUCTIVITY; THERMAL EFFECTS; VECTORS;

EID: 4344575942     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2003.12.033     Document Type: Conference Paper
Times cited : (22)

References (7)
  • 1
    • 4344684245 scopus 로고
    • The portable products revolution: Profound changes in technology migration
    • S. Matroianni, The portable products revolution: profound changes in technology migration, IEEE BCTM Tech. Dig. (1993).
    • (1993) IEEE BCTM Tech. Dig.
    • Matroianni, S.1
  • 4
    • 0026137501 scopus 로고
    • Estimation of heat transfer in SOI-MOSFET's
    • Berger M., Chai Z. Estimation of heat transfer in SOI-MOSFET's. IEEE Trans. Electron Devices. 38:1991;871-875.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 871-875
    • Berger, M.1    Chai, Z.2
  • 5
    • 0029274172 scopus 로고
    • Scaling constraints imposed by self-heating in submicron SOI MOSFET's
    • Dallmann Douglas A., Shenai K. Scaling constraints imposed by self-heating in submicron SOI MOSFET's. IEEE Trans. Electron Devices. 42:1995;489.
    • (1995) IEEE Trans. Electron Devices , vol.42 , pp. 489
    • Douglas, A.D.1    Shenai, K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.