Thermal annealing effects on the magnetic properties of (Ga 1-xMnx)As thin films grown on GaAs (1 0 0) substrates

Journal of Crystal Growth

Volumn 270, Issue 1-2, 2004, Pages 174-178

  Lee, K H ^a   Kim, H J ^a   Choi, J C ^a   Park, H L ^a   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

A3. Molecular beam epitaxy; Al. Characterization; B2. Magnetic materials

Indexed keywords

HOLE CONCENTRATION; INTERSTITIAL ATOMS; MOLE FRACTIONS; THERMAL ANNEALING;

ANNEALING; CONCENTRATION (PROCESS); FERROMAGNETISM; MAGNETIC MATERIALS; MAGNETIC PROPERTIES; MAGNETIZATION; MOLECULAR BEAM EPITAXY; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS;

GALLIUM COMPOUNDS;

EID: 4344562852     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.06.026     Document Type: Article

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