Advanced non-destructive diagnostics of monocrystalline silicon solar cells

WSEAS Transactions on Electronics

Volumn 4, Issue 9, 2007, Pages 192-197

  Macku, R ^a   Koktavy, P ^a   Skarvada, P ^a  

^a BRNO UNIVERSITY OF TECHNOLOGY   (Czech Republic)

Author keywords

Barrier capacitance; pn junction; Scanning near field optical microscopy (SNOM); Solar cell

Indexed keywords

CAPACITANCE; CRYSTALLINE MATERIALS; NEAR FIELD SCANNING OPTICAL MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS;

BARRIER CAPACITANCE; MONOCRYSTALLINE SILICON SOLAR CELLS; NON-DESTRUCTIVE DIAGNOSTICS; REVERSE-BIASED JUNCTIONS;

SILICON SOLAR CELLS;

EID: 43249121410     PISSN: 11099445     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. Haitz R. H.: Model for the Electrical Behaviour of Microplasma, J. Appl. Phys., vol. 35, no. 5, pp. 1370-1376, 1964.
2. Miles R. W., Zoppi G. and Forbes L.: Inorganic photovoltaic cells, J. Materials Today, vol. 10, no. 11, pp. 20-35, 2007.
3. Sze S. M.:Physics of Semiconductor Devices John Wiley & Sons, New York, November 2006, ISBN 978-0-471-14323-9
4. McKay K. G.: Avalanche breakdown in silicon, Phys. Rev., vol. 94, 878-884, 1964.
5. Nelson J.: The Physics.of Solar Cells, Imperial College Press, 2007, ISBN 1-86094-340-3.
6. Kubat M.: Výkonová polovodičová technika, Státní nakladatelství technické literatury, Praha 1978.
7. Agilent Technologies: Impedance measurement handbook, December 2003