Comparative Study of PE-BPSG and HDP-PSG as PMD for 0.25μm memory device

Proceedings of the IEEE 1999 International Interconnect Technology Conference, IITC 1999

Volumn , Issue , 1999, Pages 35-37

  Yu, Jengyi ^a   Gopalan, Prabhuram ^a   Feng, Jeff ^a  

^a CYPRESS SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENGINEERING;

BOTTOM CONTACTS; COMPARATIVE STUDIES; DEVICE CHARACTERISTICS; HIGH DENSITY PLASMAS; PHOSPHOSILICATE GLASS; POST-DEPOSITION; PREMETAL DIELECTRICS; SELF-ALIGNED CONTACT STRUCTURES;

THRESHOLD VOLTAGE;

EID: 43249104583     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1999.787070     Document Type: Conference Paper

References (4)

1. E.E. Ibok et al., Electrochem. Soc. Proceedings, Vol. PV93-25, p. 52
2. TH 8215, p. 66-71
3. M.D. Naeem, C. Park, K. Wangemann, H. Glawischnig, Thin Solid Films, Vol. 290-291, p. 485-492
4. H.-C. Yen, B.-Y. Jin, C. Wong, P. Chow, D. Yen, J. Hu, J. Su, J. Wang, SPIE Proc. Vol. 2335, p. 244-252