Optical and magnetic properties of Fe-doped GaN diluted magnetic semiconductors prepared by MOCVD method

Chinese Physics Letters

Volumn 25, Issue 4, 2008, Pages 1476-1478

  Tao, Zhi Kuo ^a   Zhang, Rong ^a   Cui, Xu Gao ^a   Xiu, Xiang Qian ^a   Zhang, Guo Yu ^a   Xie, Zi Li ^a   Gu, Shu Lin ^a   Shi, Yi ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DILUTED MAGNETIC SEMICONDUCTORS; FERROMAGNETISM; III-V SEMICONDUCTORS; IRON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOMAGNETICS; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTOLUMINESCENCE; SAPPHIRE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION;

C-SAPPHIRE; CHEMICAL VAPOR DEPOSITION METHODS; CRYSTALLINE PHASIS; CRYSTALLINE QUALITY; FE-DOPED; GAN THIN FILMS; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; PHASE PURITY; RAMAN SCATTERING MEASUREMENTS; SECOND PHASE;

GALLIUM NITRIDE;

EID: 43049147311     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/25/4/084     Document Type: Article

References (13)