Ultrafast carrier dynamics in undoped and p -doped InAsGaAs quantum dots characterized by pump-probe reflection measurements

Journal of Applied Physics

Volumn 103, Issue 8, 2008, Pages

  Liu, Hai Ying ^a   Meng, Zi Ming ^a   Dai, Qiao Feng ^a   Wu, Li Jun ^a   Guo, Qi ^a   Hu, Wei ^a   Liu, Song Hao ^a   Lan, Sheng ^a   Yang, Tao ^b  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENTIAL REFLECTION SPECTRA; PUMP-PROBE REFLECTION; ULTRAFAST CARRIER DYNAMICS;

CARRIER CONCENTRATION; COMPUTER SIMULATION; DOPING (ADDITIVES); PHOTOLUMINESCENCE; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; ULTRAFAST PHENOMENA;

SEMICONDUCTOR QUANTUM DOTS;

EID: 43049125150     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2913316     Document Type: Article

References (41)