Diffusion of an extra Ga atom in GaAs(001)(2 × 4) rich-as surface

Chinese Journal of Chemical Physics

Volumn 21, Issue 1, 2008, Pages

  Li, Kun ^a   Pan, Bi Cai ^b  

^a QUFU NORMAL UNIVERSITY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Adsorption; Diffusion of an atom; Molecular dynamics simulation; Surface

Indexed keywords

ADSORPTION; DIFFUSION; DIMERS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; MOLECULAR DYNAMICS; MOLECULAR PHYSICS; POTENTIAL ENERGY; POTENTIAL ENERGY SURFACES; QUANTUM CHEMISTRY; SEMICONDUCTING GALLIUM; SURFACES;

BOND-ORDER POTENTIAL; FINITE TEMPERATURES; GAAS(001); KINETIC PROCESS; LOWER ENERGIES; MOLECULAR DYNAMICS SIMULATIONS; RELATIVE ENERGIES;

ATOMS;

EID: 43049102036     PISSN: 16740068     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-0068/21/01/69-75     Document Type: Article

References (25)