Ion-conducting multilayer films based on alternating nanolayers Ag 3SI, AgI and Ag2S, AgI

Glass Physics and Chemistry

Volumn 34, Issue 2, 2008, Pages 150-154

  Tver'yanovich, Yu S ^a   Bal'makov, M D ^a   Tomaev, V V ^a   Borisov, E N ^a   Volobueva, O ^a  

^a ST PETERSBURG STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MICROSCOPY; IONIC CONDUCTION; LASER ABLATION; NANOSTRUCTURED MATERIALS;

IMPEDANCE SPECTROSCOPY; NANOLAYERS;

MULTILAYER FILMS;

EID: 43049083321     PISSN: 10876596     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1087659608020065     Document Type: Article

References (15)

1. Maier, J., Thermodynamic Aspects and Morphology of Nano-Structured Ion Conductors (Aspects of Nano-Ionics: Part I), Solid State Ionics, 2002, vols. 154-155, pp. 291-301.
2. Maier, J., Nano-Sized Mixed Conductors (Aspects of Nano-Ionics: Part III), Solid State Ionics, 2002, vol. 148, pp. 367-374.
3. Ivanov-Shits, A.K. and Murin, I.V., Ionika tverdogo tela (Solid State Ionics), St. Petersburg: SPbGU, 2000.
4. 2, Solid State Ionics, 2002, vols. 154-155, pp. 497-502.
5. 3, Solid State Ionics, 2000, vols. 136-137, pp. 1261-1266.
6. Shklovskii, B.I. and Efros, A.A., Elektronnye svoistva legirovannykh poluprovodnikov (Electrical Properties of Doped Semiconductors), Moscow: Nauka, 1979 [in Russian].
7. Tver'yanovich, Yu.S., Bal'makov, M.D., Tomaev, V.V., and Zyukhin, I.S., On the Variation of the Structure of Nanocomposite Solid Electrolytes, Fiz. Khim. Stekla, 2006, vol. 32, no. 4, pp. 674-677 [Glass Phys. Chem. (Engl. transl.), 2006, vol. 32, no. 4, pp. 491-493].
8. Berry, R.S. and Smirnov, B.M., Phase Transitions and Accompanying Phenomena in Simples Systems of Bound Atoms, Usp. Fiz. Nauk, 2005, vol. 175, no. 4, pp. 367-411.
9. 3+ Doped Chalcogenide Glass Films by Excimer Laser Ablation, J. Non-Cryst. Solids, 2003, vols. 326-327, pp. 316-319.
10. Tverjanovich, A.S., Borisov, E.N., Sokolova, O.A., and Tver'yanovich, Yu.S., Photoinduced Transformations in Ga-Ge-S: Er Films Prepared by Laser Deposition, Fiz. Khim. Stekla, 2005, vol. 31, no. 2, pp. 235-238 [Glass Phys. Chem. (Engl. transl.), 2005, vol. 31, no. 2, pp. 173-176].
11. Oreshkin, P.T., Fizika poluprovodnikov i dielektrikov (Physics of Semiconductors and Dielectrics), Moscow: Vysshaya shkola, 1977 [in Russian].
12. Emets, Yu.P., Effective Permittivity of Three-Phase Composite Materials with an Anisotropic Structure, Zh. Tekh. Fiz., 2005, vol. 75, no. 2, pp. 67-72 [Tech. Phys. (Engl. transl.), 2005, vol. 50, no. 2, pp. 207-212].
13. Emets, Yu.P., Dielectric Dispersion of Three-and Four-Component Matrix Media, Zh. Tekh. Fiz., 2003, vol. 73, no. 3, pp. 42-53 [Tech. Phys. (Engl. transl.), 2003, vol. 48, no. 3, pp. 317-328].
14. Weimer, U. and Göpel, W.A.C., Measurements on Tin Oxide Sensors to Improve Selectivities and Sensitivities, Sens. Actuators. B, 1995, vol. 26-27, pp. 13-18.
15. 18, Bull. Mater. Sci., 2003, vol. 26, no. 2, pp. 247-253.