A new approach to silicon wafer edge treatment by Ultrasonically Assisted Polishing (UAP)

International Journal of Materials and Product Technology

Volumn 31, Issue 2-4, 2008, Pages 159-175

  Yang, Weiping ^a,b,c   Wu, Yongbo ^b   Kato, Masana ^b  

^a NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^b AKITA PREFECTURAL UNIVERSITY   (Japan)

^c NANCHANG HANGKONG UNIVERSITY   (China)

Author keywords

Material removal rate; MRR; Silicon wafer edge; Surface roughness; UAP; Ultrasonically assisted polishing

Indexed keywords

POLISHING; SURFACE ROUGHNESS; ULTRASONICS; VIBRATIONS (MECHANICAL);

MATERIAL REMOVAL RATE; SILICON WAFER EDGE; ULTRASONICALLY ASSISTED POLISHING; VIBRATION POLISHING;

SILICON WAFERS;

EID: 42949175088     PISSN: 02681900     EISSN: None     Source Type: Journal    
DOI: 10.1504/IJMPT.2008.018017     Document Type: Article

References (11)