Time-domain modeling of low-frequency noise in deep-submicrometer MOSFET

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 55, Issue 1, 2008, Pages 245-257

  Hamid, Nor Hisham ^a   Murray, Alan F ^b   Roy, Scott ^c  

^a DEPARTMENT OF CHEMICAL ENGINEERING   (Malaysia)

^b UNIVERSITY OF EDINBURGH   (United Kingdom)

^c UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

Adaptation model; Analog multiplier; Analogue multiplier; Computational modeling; Flicker noise; Integrated circuit modeling; Low frequency noise; MOSFET circuits; Nanoscale MOSFETs; Noise; Random telegraph signal (RTS) noise; Semiconductor device modeling; Time domain analysis

Indexed keywords

CIRCUIT SIMULATION; COMPUTER SIMULATION; MONTE CARLO METHODS; SPICE; TIME DOMAIN ANALYSIS; TRANSIENTS;

LOW-FREQUENCY NOISE; RANDOM TELEGRAPH SIGNAL NOISE; SEMICONDUCTOR DEVICE MODELING;

MOSFET DEVICES;

EID: 42949160544     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2007.910543     Document Type: Article

References (55)