Role of chamber dimension in fluorocarbon based deposition and etching of Si O2 and its effects on gas and surface-phase chemistry

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 3, 2008, Pages 545-554

  Joseph, E A ^a,b   Zhou, B S ^a   Sant, S P ^a   Overzet, L J ^a   Goeckner, M J ^a  

^a The University of Texas at Dallas   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER GEOMETRY; PLASMA CHEMISTRY; SELF-BIAS VOLTAGE; SURFACE-PHASE CHEMISTRY;

ETCHING; LANGMUIR PROBES; PLASMA APPLICATIONS; PLASMA DENSITY; SILICA; SPECTROSCOPIC ELLIPSOMETRY;

FLUOROCARBONS;

EID: 42949117369     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2909963     Document Type: Article

References (16)