Mechanism of growth of the ge wetting layer upon exposure of Si(100)-2 x 1 to GeH4

Journal of the American Chemical Society

Volumn 130, Issue 16, 2008, Pages 5440-5442

  Liu, Chie Sheng ^a   Chou, Li Wei ^a   Hong, Lu Sheng ^a   Jiang, Jyh Chiang ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMICAL REACTION KINETICS; DENSITY FUNCTIONAL THEORY; ENERGY; EXPOSURE; GROWTH RATE; IMAGE DISPLAY; MODEL; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 42949104741     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja710802s     Document Type: Article

References (17)