Hydrogen-modification of electronic surface, bulk, and interface properties of silicon

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 25-37

  Monch W ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ELECTRONIC STRUCTURE; ETCHING; FERMI LEVEL; HYDROGEN; IMPURITIES; INTERFACES (MATERIALS); PASSIVATION; SEMICONDUCTOR DOPING; SURFACE PROPERTIES;

ATOMIC HYDROGEN; CAPACITANCE VOLTAGE CHARACTERISTICS;

SEMICONDUCTING SILICON;

EID: 42849084122     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<25::AID-PSSA25>3.0.CO;2-C     Document Type: Article

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