Stability of electron-hole plasma in type-I and type-II GaAs-GaAlAs single quantum wells

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 16, 2004, Pages

  Ando, Taro ^a   Nakayama, Masaaki ^b   Hosoda, Makoto ^b  

^a CENTRAL RESEARCH LABORATORY   (Japan)

^b Osaka Prefecture University   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; GALLIUM; GALLIUM ALUMINUM ARSENIDE; GALLIUM ARSENIDE; UNCLASSIFIED DRUG;

ARTICLE; CALCULATION; ELECTRIC FIELD; ELECTRON; ENERGY; QUANTUM MECHANICS; SEMICONDUCTOR;

EID: 42749109057     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.165316     Document Type: Article

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