From oxide breakdown to device failure: An overview of post-breakdown phenomena in ultrathin gate oxides

2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Volumn , Issue , 2006, Pages

  Suñé, Jordi ^a   Wu, Ernest Y ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 42749107472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/icicdt.2006.220807     Document Type: Conference Paper

References (17)

1. B. Kaczer, R. Degraeve, M. Rasras, K. Van de Mieroop, P. J. Roussel and G. Groeseneken, Impact of MOSFET Gate Oxide Breakdown on Digital Circuit Operation and Reliability, IEEE Trans. Electron Devices, vol. 49, pp. 500 506 (2002).
2. R. Rodriguez, J.H. Stathis, B.P. Linder, S. Kowalczyk, C.T. Chuang, R. V. Joshi, G. Northrop, K. Bernstein, A.J. Bhavnagarwala, and S. Lombardo, The Impact of Gate Oxide Breakdown on SRAM Stability, IEEE Electron Dev. Lett. 23, 559-561 (2002).
3. R. Rodriguez, J.H. Stathis and B.P. Linder, A model for gate-oxide breakdown in CMOS inverters, IEEE Electron Device Lett., vol. 24, 114-116 (2003).
4. F. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis and G. Ghibaudo, A Thorough Investigation of Progressive Breakdown in Ultra-Thin Oxides, Physical Understanding and Application for Industrial Reliability Assessment, Proc of International Reliability Physics Symp., pp. 45-54 (2002)
5. B.P. Linder, S. Lombardo, J. H, Stathis, A. Vayshenker and DJ. Frank, Voltage Dependence of Hard Breakdown Growth and the Reliability Implication in Thin Dielectrics, IEEE Elect. Dev. Lett., vol. 23 (nil), pp. 661-663 (2002).
6. 2 gate oxides", Microelectronics Reliability, vol. 43 (8), pp. 1185-1192 (2003).
7. M.A. Alam, R.K. Smith, B.E. Weir and P.J. Silverman, "Statistically independent soft-breakdowns redefine oxide reliability specifications", IEDM Technical Digest, pp. 151-154 (2002).
8. J. Sufñé, E.Y. Wu and W.L. Lai, "Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits", IEEE Trans. Electron Dev., vol. 51, 1584-1592 (2004)
9. B. Kaczer, R. Degraeve, R O'Connor, Ph. Roussel and G. Groeseneken, Implications of progressive wearout for lifetime extrapolation of ultra-thin (EOT ∼1 nm) SiON films, Int. Electron Devices Meeting Techn. Dig., pp.713-716 (2004).
10. E. Y. Wu, J. Sufñé, W. Lai, A. Vayshenker and D. Harmon, A Comprehensive Investigation of Gate Oxide Breakdown of P+Poly/PFETs Under Inversion Mode, Int. Electron Dev. Meeting, Techn. Digest, pp. 407-410 (2005)
11. J. Sufñé, E. Y. Wu, and W. L. Lai, Statistics of competing post-breakdown failure modes in ultrathin MOS devices, IEEE Trans. Electron Dev. Vol. 53 (2), pp. 224-234 (2006)
12. J.S. Suehle, B. Zhu, Y. Chen and J.B. Bernstein, Detailed study and projection of hard breakdown evolution in ultrathin gate oxides, Microelectronics Reliability, vol. 45, pp. 419-426 (2005).
13. K. Okada and S. Kawasaki, "New dielectric breakdown model of local wearout in ultra thin silicon dioxides", Proc. of the Int. Conf. Solid State Devices and Materials (1995), pp. 473-475.
14. E. Wu and J. Suñé, Voltage scaling and statistical properties of post-breakdown for ultra-thin-oxide PFETs in inversion mode, Proc. 2006 International Reliability Physics Symposium (2006)
15. E. Wu and J. Suñé, Post-Breakdown Characteristics of Extrinsic Failure Modes for Ultra-Thin Gate Oxides Proc. International Reliability Physics Symposium (2006)
16. J. Suñé and E. Y. Wu, Temperature dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics, Appl. Phys. Lett, vol. 86, pp. 193502 (1-3) (2005).
17. E.Y. Wu and J. Suñé., The effects of device dimensions on the post-BD characteristics of ultrathin gate oxides, IEEE Electron Device Letters, vol. 26 (6), pp. 401-403 (2005)