Structural properties of a thallium-induced Si(111)-1×1 surface

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 19, 2004, Pages

  Kim, N D ^a   Hwang, C G ^a   Chung, J W ^a   Kim, T C ^b   Kim, H J ^b   Noh, D Y ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; THALLIUM;

ARTICLE; BINDING SITE; CALCULATION; CONDUCTANCE; ELECTRON DIFFRACTION; GEOMETRY; MATHEMATICAL ANALYSIS; RADIATION SCATTERING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR; TEMPERATURE;

EID: 42749107153     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.195311     Document Type: Article

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19. HKL|.
20. The bulk Tl has a hcp structure with lattice constants of a = 3.46 Å and c = 5.52 Å.