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Volumn 69, Issue 14, 2004, Pages

Temporal measurement of hot-electron relaxation in a phonon-cooled metal island

Author keywords

[No Author keywords available]

Indexed keywords

METAL;

EID: 42749103476     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.140301     Document Type: Article
Times cited : (31)

References (26)
  • 15
    • 33646664870 scopus 로고    scopus 로고
    • note
    • dB∼2 GHz.
  • 17
    • 33646659483 scopus 로고    scopus 로고
    • note
    • Al to be 3, 10, and 120 at T = 1.4 K, 1.0 K, and 0.3 K, respectively. The SIN junction resistance is always greater than 1 kΩ and has a negligible contribution to the thermal conductance.
  • 19
    • 33646638090 scopus 로고    scopus 로고
    • note
    • Typically - 100 dB (100 fW), the rf-SET of Ref. 16 can tolerate much higher power than the rf-SIN.
  • 20
    • 33646642988 scopus 로고    scopus 로고
    • note
    • n-2ε. -2é.
  • 21
    • 33646649381 scopus 로고    scopus 로고
    • note
    • For simplicity, we used n = 5 for the fit.
  • 22
    • 0003548589 scopus 로고
    • Academic, London
    • The volumetric fractions of Cu, Au, and NiCr in our device are 5%, 65%, and 30%, respectively. Based on bulk data, we estimate the fractional contributions to the heat capacity are 1%, 14%, and 85%. For references to heat capacity measurements see: O.V. Lounasmaa, Experimental Principles and Methods Below 1 K (Academic, London, 1974).
    • (1974) Experimental Principles and Methods below 1 K
    • Lounasmaa, O.V.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.