Design and modeling considerations for fully-integrated silicon W-band transceivers

RFIT 2007 - IEEE International Workshop on Radio-Frequency Integration Technology

Volumn , Issue , 2007, Pages 141-149

  Nicolson, S T ^c   Laskin, E ^a   Khanpour, M ^a   Aroca, R ^a   Tomkins, A ^a   Yau, K H K ^a   Chevalier, P ^b   Garcia, P ^b   Chantre, A ^b   Sautreuil, B ^b   Voinigescu, S P ^a  

^a UNIVERSITY OF TORONTO   (Canada)

^b STMICROELECTRONICS   (France)

^c NONE

Author keywords

Design methodology; Doppler radar; Integrated circuit modeling; Millimeter wave transceivers

Indexed keywords

BICMOS TECHNOLOGY; INTEGRATED CIRCUIT MANUFACTURE; INTEGRATION; NETWORKS (CIRCUITS); NONMETALS; POWER AMPLIFIERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON; SILICON ALLOYS; TECHNOLOGY; TRANSCEIVERS; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

BAND SYSTEMS; BAND TRANSCEIVERS; CIRCUIT ARCHITECTURES; CIRCUIT DESIGNS; DESIGN AND MODELING; DESIGN CHALLENGES; DESIGN METHODOLOGY; DOPPLER RADAR; INTEGRATED CIRCUIT MODELING; INTEGRATION TECHNOLOGIES; MILLIMETER WAVE TRANSCEIVERS; MODEL TRANSFORMERS; MODELING TECHNIQUES; OPTIMUM BIASING; RADIO FREQUENCIES; SIGE BICMOS; SIGE HBT; TRANSMISSION LINES.;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 42649127614     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RFIT.2007.4443938     Document Type: Conference Paper

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