SiGe nanowire field effect transistors

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 1, 2008, Pages 457-460

  Qi, Cheng ^a   Rangineni, Yaswanth ^a   Goncher, Gary ^b   Solanki, Raj ^a,b   Langworthy, Kurt ^c   Jordan, Jay ^d  

^a Portland State University   (United States)

^b PORTLAND STATE UNIVERSITY   (United States)

^c UNIVERSITY OF OREGON   (United States)

^d Thermo Fisher Scientific   (United States)

Author keywords

Mobility; Nanowire; SiGe; Transistor

Indexed keywords

ELECTRICAL ANALYSIS; SOURCE-DRAIN CHANNELS;

ELECTRODES; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; HOLE MOBILITY;

NANOWIRES;

EID: 42649103638     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.083     Document Type: Article

References (10)