Trapping effects in organic thin film transistors

2006 6th IEEE Conference on Nanotechnology, IEEE-NANO 2006

Volumn 1, Issue , 2006, Pages 82-85

  Erlen, C ^a   Brunetti, F ^a   Lugli, P ^a   Fiebig, M ^b   Schiefer, S ^b   Nickel, B ^b  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF MUNICH   (Germany)

Author keywords

Capture cross section; Hysteresis; OTFT; Pentacene; Simulation; Traps

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRON TRAPS; HYSTERESIS;

DEVICE MOBILITY; ORGANIC CIRCUITS; PENTACENE; TRAP CHARGING;

THIN FILM TRANSISTORS;

EID: 42549131420     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/nano.2006.247572     Document Type: Conference Paper

References (12)

1. V. Podzorov, S. Sysoev, E. Loginova, V. Pudalov, and M. Gershenson, "Single-crystal organic field effect transistors with the hole mobility 8 cm2/vs," Appl. Phys. Lett., vol. 83, p. 3504, 2003.
2. A. Bolognesi, M. Berliocchi, and M. Manenti, "Effects of grain boundaries, field dependent mobility and interface trap states on the electrical characteristics of pentacene thin film transistors," IEEE Trans. Electron Dev., vol. 51, p. 1997, 2004.
3. M. A. Alam, A. Dodabalapur, and M. R. Pinto, "A two-dimensional simulation of organic trasnsistors," IEEE Trans. Electron Dev., Vol. 44, p. 1332, 1997.
4. S. Scheinert, G. Paasch, and M. Schrodner, "Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator," J. Appl. Phys., vol. 92, p. 330, 2002.
5. A. Bolognesi and A. Di Carlo, "Influence of carrier mobility and interface trap states on the transfer and output characteristics of organic thin film transistors," J. Comp. Elec., vol. 2, p. 297, 2003.
6. G. Horowitz. Organic thin film transistors, "From theory to real devices," J. Mater. Res., vol. 19, p. 1946, 2004.
7. A. Bolognesi, A. Di Carlo, P. Lugli, and Conte, "Large drift-diffusion and monte carlo modeling of organic semiconductor devices," Synthetic Metals, vol. 138, pp. 95-100, 2003.
8. A. Bolognesi, A. Di Carlo, P. Lugli, "Influence of carrier mobility and contact barrier height on the electrical characteristics of organic transistors," Appl. Phys. Lett., vol. 81, p. 4646, August 2002.
9. J. Kang, D. da Silva Filho, J. Bredas, X. Zhu, "Shallow trap states in pentacene thin films from molecular sliding," Appl. Phys. Lett., vol. 86, p. 152115, 2005.
10. S. Sze, Physics of Semiconductor Devices, Wiley & Son, 1982.
11. G. Paasch, T. Lindner, S. Scheinert, "Variable range hopping as possible origin of a universal relation between conductivity and mobility in disordered semiconductors," Synthetic Metals, vol. 132, p. 97, 2002.
12. P. Masson, J. Autran, M. Houssa, X. Garros, C. Lerrox, "Frequency characterization and modeling of interface traps in HfSixOy/HfO2 gate dielectric stack from a capacitance point-of-view," Appl. Phys. Lett., vol. 81, pp. 3392-3394, 2002.