Monte Carlo study of remote Coulomb and remote surface roughness scattering in nanoscale Ge PMOSFETs with ultrathin high-κ dielectrics

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 170-172

  Ghosh, Bahniman ^a   Fan, Xiao Feng ^a   Register, Leonard F ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Germanium; Monte Carlo; Remote Coulomb; Remote surface roughness

Indexed keywords

DIELECTRIC MATERIALS; MONTE CARLO METHODS; MOSFET DEVICES; SCATTERING;

REMOTE COULOMB; REMOTE SURFACE ROUGHNESS;

COULOMB INTERACTIONS;

EID: 42549120278     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282865     Document Type: Conference Paper

References (8)

1. J. Li and T.P. Ma, "Scattering of silicon inversion layer electrons by metal/oxide interface roughness, "Journal of Applied Physics, Vol. 62, No. 10, 1987, pp. 4212-4215.
2. S. Saito et.al., "Effects of remote-surface roughness scattering on carrier mobility in field-effect-transistors with ultrathin gate dielectrics," Applied Physics Letters, Vol. 84, No.8, 2004, pp. 1395-1397.
3. F. Gamiz and J. B. Roldan, "Scattering of electrons in silicon inversion layers by remote surface roughness," Journal of Applied Physics, Vol. 94, No. 1, 2003, pp. 392-399.
4. rd European Solid-State Device Research- ESSDERC '03 (IEEE Cat. No. 03EX704), Piscatavvay, NJ, USA, IEEE, 2003, pp. 403-406.
5. G.S. Lujan, S. Kubicek, S. De Gendt, M. Heyns, W. Magnus and K. De Meyer, "Mobility degradation in high k transistors, the role of the charge scattering", in ESSDERC 2003, Proceedings of the 33rd European Solid-State Device Research -ESSDERC '03 (IEEE Cat. No. 03EX704), Piscatavvay, NJ, USA, IEEE, 2003, pp. 399-402.
6. MIT well tempered 50 nm n-MOSFET device structure, http://www-mtl.mit. edu/Well/.
7. M. Lundstrom, "Elementary Scattering Theory of the Silicon MOSFET," IEEE Electron Device Letters, Vol. 18, No 7, July 1997.
8. F. Gamiz, J. B. Roldan, J. E. Carceller, P. Cartujo," Monte Carlo simulation of remote-Coulomb-scattering- limited mobility in metal - oxide-semiconductor transistors", Applied Physics Letters, Vol. 82, No. 19, 12 May 2003, pp. 3251-3253.