Fabrication of Cd3As2 nanowires by direct vapor-solid growth, and their infrared absorption properties

Nanotechnology

Volumn 19, Issue 10, 2008, Pages

  Omari, M ^a   Kouklin, N ^a   Lu, G ^a   Chen, J ^a   Gajdardziska Josifovska, M ^b  

^a University of Wisconsin Milwaukee   (United States)

^b UNIVERSITY OF WISCONSIN MILWAUKEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; GROWTH RATE; INFRARED ABSORPTION; SEMICONDUCTING CADMIUM COMPOUNDS; SINGLE CRYSTALS;

GROWTH DIRECTION; SINGLE-CRYSTAL NANOWIRES; SPECTRAL CHARACTERIZATION; VAPOR-SOLID GROWTH;

NANOWIRES;

ARSENIC; CADMIUM; NANOWIRE;

ABSORPTION SPECTROSCOPY; ARTICLE; DEVICE; ELECTROMAGNETIC FIELD; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; LIQUID; PRIORITY JOURNAL; SEMICONDUCTOR; SOLID; SYNTHESIS; VAPOR;

EID: 42549088206     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/10/105301     Document Type: Article

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