Linear-mode single-photon APD detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6771, Issue , 2007, Pages

  Huntington, Andrew S ^a   Compton, Madison A ^a   Williams, George M ^a  

^a Voxtel Inc   (United States)

Author keywords

APD; Excess noise factor; HgCdTe; Impact ionization engineering; InAlAs; InGaAs; InP; Linear mode; Photon counting; SPAD

Indexed keywords

ACOUSTIC NOISE; ALUMINUM ARSENIDE; IMPACT IONIZATION; MOLECULAR BEAM EPITAXY; PHOTONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EXCESS NOISE FACTOR; IMPACT IONIZATION ENGINEERING; LINEAR MODE; PHOTON COUNTING;

AVALANCHE PHOTODIODES;

EID: 42449138379     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.751925     Document Type: Conference Paper

References (34)

1. R. J. McIntyre, "The distribution of gains in uniformly multiplying avalanche photodiodes: Theory," IEEE Transactions on Electron Devices, vol. ED-19, pp. 703-713 (1972).
2. J. Conradi, "The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental," IEEE Transactions on Electron Devices, vol. ED-19, pp. 713-718 (1972).
3. R. J. McIntyre, "A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response," IEEE Transactions on Electron Devices, vol. 46, no. 8, pp. 1623 - 1631 (1999).
4. P. Yuan, A. Anselm, C. Hu, H. Nie, C. Lenox, A. L. Holmes, B. G. Streetman, J. C. Campbell, and R. J. McIntyre, "A new look at impact ionization - Part II: Gain and noise in short avalanche photodiodes," IEEE Transactions on Electron Devices, vol. 46, no. 8, pp. 1632-1639 (1999).
5. J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell, "The HgCdTe Electron Avalanche Photodiode," Infrared Detector Materials and Devices, Proceedings of SPIE, vol. 5564, pp. 44-53 (2004).
6. M. A. Kinch, J. D. Beck, C.-F. Wan, F. Ma, and J. Campbell, "HgCdTe electron avalanche photodiodes," Journal of Electronic Materials, vol. 33, no. 6, pp. 630-639 (2004).
7. R. S. Hall, N. T. Gordon, J. Giess, J. E. Hails, A. Graham, D. C. Herbert, D. J. Hall, P. Southern, J. W. Cairns, D. J. Lees, and T. Ashley, "Photomultiplication with low excess noise factor in MWIR to optical fiber compatible wavelengths in cooled HgCdTe mesa diodes," Infrared Technology and Applications XXXI, Proceedings of SPIE, vol. 5783, pp. 412-423 (2005).
8. C. Lenox, P. Yuan, H. Nie, O. Baklenov, C. Hansing, J. C. Campbell, A. L. Holmes, Jr., and B. G. Streetman, "Thin multiplication region InAlAs homojunction avalanche photodiodes," Applied Physics Letters, vol. 73, no. 6, pp. 783-784 (1998).
9. S. Wang, J. B. Hurst, F. Ma, R. Sidhu, X. Sun, X. G. Zheng, A. L. Holmes, Jr., A. Huntington, L. A. Coldren, and J. C. Campbell, "Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates," IEEE Photonics Technology Letters, vol. 14, no. 12, pp. 1722-1724 (2002).
10. M. A. Saleh, M. M. Hayat, B. E. A. Saleh, and M. C. Teich, "Dead-space-based theory correctly predicts excess noise factor for thin GaAs and AlGaAs avalanche photodiodes," IEEE Transactions on Electron Devices, vol. 47, no. 3, pp. 625-633 (2000).
11. M. A. Saleh, M. M. Hayat, O. Kwon, A. L. Holmes, Jr., J. C. Campbell, B. E. A. Saleh, and M. C. Teich, "Breakdown voltage in thin III-V avalanche photodiodes," Applied Physics Letters, vol. 79, no. 24, pp. 4037-4039 (2001).
12. Insert reference to my Geiger APD modeling paper for past SPIE conference.
13. 0.3Te avalanche photodiodes and resonance phenomenon in the multiplication noise," Applied Physics Letters, vol. 83, no. 4, pp. 785-787 (2003).
14. Product Data Sheet for Northrop Grumman Space Technology / TRW AHB109C 2.5 Gbps Transimpedance Amp (2003).
15. 0.05 microbumps using interlaminated tin and gold layers for flip-chip interconnection," IEEE Microwave and Wireless Components Letters, vol. 13, no. 7, pp. 256-258 (2003).
16. M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin, K. A. Gustavsen, and G. M. Williams, "HgCdTe MWIR back-illuminated electron-initiated avalanche photodiode arrays," Journal of Electronic Materials, published online (2007).
17. J. Beck, C. Wan, M. Kinch, J. Robinson, P. Mitra, R. Scritchfield, F. Ma, and J. Campbell, "The HgCdTe Electron Avalanche Photodiode," Infrared Detector Materials and Devices, Proceedings of SPIE, vol. 5564, pp. 44-53 (2004).
18. R. E. Burgess, "Some topics in the fluctuation of photo-processes in solids," Journal of Physical Chemistry of Solids, vol. 22, pp. 371-377 (1961).
19. M. C. Teich, K. Matsuo, and B. E. A. Saleh, "Excess noise factors for conventional and superlattice avalanche photodiodes and photomultiplier tubes," IEEE Journal of Quantum Electronics, vol. QE-22, no. 8, pp. 1184-1193 (1986).
20. J. Duffey, A. Kalma, J. Beck, M.Woodall, T. Murphy, "The Advanced Detector Technology Program - Development of a Low-Noise, High-Frame-Rate SWIR APD Camera," 2005 Meeting of the Military Sensing Symposia Specialty Group on Detectors .14-18 February 2005
21. J. C. Campbell, "Recent advances in telecommunications avalanche photodiodes," Journal of Lightwave Technology, vol. 25, no. 1, pp. 109-121 (2007).
22. K. A. Anselm, P. Yuan, C. Hu, C. Lenox, H. Nie, G. Kinsey, J. C. Campbell, and B. G. Streetman, "Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions," Applied Physics Letters, vol. 71, no. 26, pp. 3883-3885 (1997).
23. D. S. Ong, K. F. Li, G. J. Rees, G. M. Dunn, J. P. R. David, and P. N. Robson, "A Monte Carlo investigation of multiplication noise in thin p+-i-n+ avalanche photodiodes," IEEE Transactions on Electron Devices, vol. 45, no. 8, pp. 1804-1810 (1998).
24. P. Yuan, S. Wang, X. Sun, X. G. Zheng, A. L. Holmes, Jr., and J. C. Campbell, "Avalanche photodiodes with an impact-ionization-engineered multiplication region," IEEE Photonic Technology Letters, vol. 12, no. 10, pp. 1370-1372 (2000).
25. xAs(0.3<×<0.6)-GaAs heterojunction APDs," IEEE Journal of Quantum Electronics, vol. 41, no. 1, pp. 70-75 (2005).
26. W. Clark, United States Patent 6,747,296 (2004).
27. W. Clark (private communication).
28. K. F. Brennan and J. Haralson, II, "Superlattice and multiquantum well avalanche photodetectors: physics, concepts and performance," Superlattices and Microstructures, vol. 28, no. 2, pp. 77-104 (2000).
29. F. Capasso, W. T. Tsang, A. L Hutchinson, and G. F. Williams, "Enhancement of electron impact ionization in a superlattice: a new avalanche photodiode with a large ionization rate ratio," Applied Physics Letters, vol. 40, no. 1, pp. 38-40 (1982).
30. G. Leveque, M. Nasser, D. Bertho, B. Orsal and R. Alabedra, "Ionization energies in CdxHgl-xTe avalanche photodiodes," Semicond. Sci. Technol. 8, 1317 (1993).
31. G. Leveque, M. etal, Ionization energies in CdHgTe avalanche photodiodes, Semi.SciTech(1993)
32. M. Kinch, J. Beck, C. Wan, F. Ma, J. Campbell, J.Electron. Mater. Vol. 33(6), pp.630-639 (2004)
33. M. B. Reine, J. W. Marciniec, K. K. Wong, T. Parodos, J. D. Mullarkey, P. A. Lamarre, S. P. Tobin and K. A. Gustavsen, G. M. Williams," HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiode Arrays" SPIE Optics and Photonics, Proc. SPIE 6294 (2006)
34. Private communication M. Reine (2007), previously unpublished