Investigations of SiC semiconductor nanoinclusions formed by sequential ion implantation and annealing in thermally oxidized Si

Surface and Interface Analysis

Volumn 40, Issue 3-4, 2008, Pages 571-574

  Wainstein, Dmitry ^a   Kovalev, Anatoly ^a   Tetelbaum, David ^a,b   Mikhaylov, Alexey ^a,b   Belov, Alexey ^b  

^a CNIICHERMET   (Russian Federation)

^b LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

Author keywords

Diamond like carbon; EELFS; Nanoinclusions; Silicon; Silicon carbide; White photoluminescence; XPS

Indexed keywords

ANNEALING; DIAMOND LIKE CARBON FILMS; ELECTRON ENERGY LOSS SPECTROSCOPY; OXIDATION; PHASE COMPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON CARBIDE;

SEMICONDUCTOR NANOINCLUSIONS;

SILICON;

EID: 42449130014     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2734     Document Type: Conference Paper

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