SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 19, Issue 16, 2008, Pages

Laterally defined freely suspended quantum dots in GaAs/AlGaAs heterostructures

(5) Rossler, C a Bichler, M b Schuh, D c Wegscheider, W c Ludwig, S a

a UNIVERSITY OF MUNICH (Germany)

b WALTER SCHOTTKY INSTITUT (Germany)

c UNIVERSITY OF REGENSBURG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC PROPERTIES; NANOSTRUCTURES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

QUANTUM POINT CONTACTS; TRANSPORT SPECTROSCOPY;

HETEROJUNCTIONS;

ARSENIC DERIVATIVE; GALLIUM; NANOMATERIAL; QUANTUM DOT;

ARTICLE; CHEMICAL STRUCTURE; ELECTRON; MOLECULAR INTERACTION; PHONON; PRIORITY JOURNAL; SPECTROSCOPY; STRUCTURE ANALYSIS; SUSPENDED PARTICULATE MATTER;

EID: 42449118494 PISSN: 09574484 EISSN: 13616528 Source Type: Journal
DOI: 10.1088/0957-4484/19/16/165201 Document Type: Article

Times cited : (8)

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