Analysis of interface impurities in electroplated Cu layers by using GD-OES and TOF-SIMS

Surface and Interface Analysis

Volumn 40, Issue 3-4, 2008, Pages 418-422

  Klemm, Denis ^a   Stangl, Marcel ^a   Peeva, Anita ^b   Hoffmann, Volker ^a   Wetzig, Klaus ^a   Eckert, Jürgen ^a  

^a IFW DRESDEN   (Germany)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Copper; Depth profiling; Electroplating; GD OES; GDS; SIMS; TOF SIMS

Indexed keywords

ADSORPTION; DEPTH PROFILING; ELECTROPLATING; GLOW DISCHARGES; IMPURITIES; METALLIZING; OPTICAL EMISSION SPECTROSCOPY;

ELECTROLYTE SOLUTIONS; INTERCONNECT METALLIZATIONS; SEED LAYERS;

COPPER;

EID: 42449109039     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.2743     Document Type: Conference Paper

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