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Volumn 75, Issue 1, 1995, Pages 156-159

Charge transport in arrays of semiconductor gamma-ray detectors

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC CURRENTS; ELECTRODES; ELECTRONS; GAMMA RAYS; GREEN'S FUNCTION; MATHEMATICAL MODELS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DEVICES; SPECTRUM ANALYSIS;

EID: 4244180299     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.75.156     Document Type: Article
Times cited : (433)

References (22)
  • 16
    • 84927503985 scopus 로고    scopus 로고
    • British Atomic Energy Report No. BR-49, 1944 (unpublished).
    • Frisch, O.1
  • 17
    • 84927464220 scopus 로고    scopus 로고
    • The weighting potential, commonly used in this literature, is 1/4π times the integral over the electrode of the normal derivative of the Green's function.
  • 19
    • 0003470014 scopus 로고
    • Carrier diffusion is insensitive to the properties of the specific semiconductor material. The diffusion constant is linearly related to the mobility by the Einstein relation [see, for example, Sanders, Philadelphia, ], so materials in which carriers diffuse rapidly also have large drift velocities, and hence less time to diffuse. Total spread depends on thickness and bias voltage but not on mobility. For example, rms spreading in a 1 mm thick detector (of any material) at 100 V bias is about 23 μm. See, H. G. Spieler, E. E. Haller, IEEE Trans. Nucl. Sci.
    • (1976) Solid State Physics , vol.22 NS , pp. 419
    • Ashcroft, N.W.1    Mermin, N.D.2
  • 22
    • 84927507936 scopus 로고    scopus 로고
    • The time-dependent terms in Maxwell's equations are negligible if the carrier velocities are much less than c, a condition that is easily satisfied in practice.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.