Impurity doping during Pb1 - xSnxSe/CaF2 epitaxial growth

Thin Solid Films

Volumn 281-282, Issue 1-2, 1996, Pages 43-45

  Suzuki, Masanobu ^a   Seki, Torao ^a  

^a TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Lead; Molecular beam epitaxy (MBE); Selenium; Tin

Indexed keywords

BISMUTH; CALCIUM COMPOUNDS; CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC PROPERTIES; FILM GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING LEAD COMPOUNDS; SEMICONDUCTOR DOPING; THALLIUM;

CALCIUM FLUORIDE; CRYSTALLINE QUALITY; DOPANTS; ELECTRON CONCENTRATIONS; EPITAXIAL FILM; HOLE CONCENTRATIONS; HOT WALL EPITAXY; IMPURITY DOPING;

EPITAXIAL GROWTH;

EID: 4244130014     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(96)08571-9     Document Type: Article

References (12)

1. D.K. Hohnke and S.W. Kaiser, J. Appl. Phys., 45 (1974) 892.
2. D.L. Smith and V.Y. Picghardt, J. Electrochem. Soc., 125 (1978) 2042.
3. I. Kasai, J. Hornung and J. Baars, J. Electron. Mater., 4 (1975) 299.
4. T.C. Harman, J. Nonmetals, 1 (1973) 183.
5. K.-H. Bachem, P. Norton and H. Preier, in G. Bauer, F. Kuchar and H. Heinrich (eds.), Two-Dimensional Systems, Heterostructures and Superlattices, Springer Series in Solid State Sciences, Vol. 53, Springer, Berlin, 1984, p. 147.
6. P. Norton, G. Knoll and K.-H. Bachem, J. Vac. Sci. Technol. B, 3 (1985) 782.
7. M. Suzuki and T. Seki, Acta Crystallogr., Sect. A, 43 (1987) Suppl. 120.
8. I. Melngailis and T.C. Harman, in R.K. Willardson and A.C. Beer (eds.), Semiconductors and Semimetals, Vol. 5, Academic Press, New York and London, 1970, p. 111.
9. A.J. Strauss, J. Electron. Mater., 2 (1973) 553.
10. I.V. Kucherenko, Yu.N. Korolev and A.P. Shotov, Sov. Phys. Semicond., 5 (1971) 868.
11. A.P. Shotov, I.V. Kucherenko, Yu.N. Kololev and E.G. Chizhevskii, Sov. Phys. Semicond., 6 (1973) 1307.
12. M. Suzuki, T. Seki and N. Miyamoto, Acta Crystallogr., Sect. A, 49 (1993) Suppl. 315.