Damage induced by pions in silicon detectors

Nuclear Physics B (Proceedings Supplements)

Volumn 44, Issue 1-3, 1995, Pages 510-519

  Bates, S J ^a   Furetta, C ^a   Glaser, M ^a   Lemeilleur, F ^a   Soave, C ^a   Leon Florian E ^b  

^a CERN   (Switzerland)

^b UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4244127805     PISSN: 09205632     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0920-5632(95)80078-6     Document Type: Article

References (14)

1. Non-ionizing energy deposition in silicon for radiation damage studies
2. Hadron fluxes in inner parts of LHC detectors
3. Pion induced displacement damage in silicon devices
4. Damage observed in silicon diodes after low energy pion irradiation
5. Radiation damage in silicon detectors-self annealing corrections
6. Systematische Untersuchungen zur Strahlenresistenz von Silizium-Detektoren für die Verwendung in Hochenergiephysik-Experimenten
7. Neutron irradiation of silicon diodes at temperatures of +20°C and −20°C
8. The effects of proton and neutron irradiations on silicon detectors for the LHC
9. Neutron, proton and gamma irradiations of silicon detectors
10. Study of electrical properties and charge collection of silicon detectors under neutron, proton and gamma irradiations
11. Radiation studies and operational projections for silicon in the ATLAS inner detector